| PART |
Description |
Maker |
| ROT-116 ROT-200 |
Precision Rotative Transducers, Laws: Sine and Cosine/Sine Only/Cosine Only, Size 11-20, Continuous Measure on 360 Degrees, Long Life, Bushing or Servo Mounting
|
Vishay
|
| 116BFZ 116SFZ |
Precision Rotative Transducers 360隆? Special Laws: Sine/Cosine
Precision Rotative Transducers 360° Special Laws: Sine/Cosine
|
Vishay Siliconix
|
| HI1-0507A2 HI1-0506A5 HI1-0507A5 HI1-0506A2 HI3-05 |
Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 536-0402-5 90; Contact Mating Area Plating: Tin
Interface IC 接口IC
|
Intersil, Corp.
|
| 2SJ211 2SJ211-T2B 2SJ211-L 2SJ211-T1B |
P-CHANNEL MOS FET FOR SWITCHING
Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0621-7 00; No. of Positions: 8; Connector Type: Panel
|
NEC[NEC]
NEC Corp.
|
| 30CTH02 30CTH02-1 30CTH02FP 30CTH02S |
200V 20A HyperFast Discrete Diode in a TO-220AB package
300V 20A HyperFast Discrete Diode in a TO-262 package
300V 20A HyperFast Discrete Diode in a TO-220 FullPak package
200V 30A HyperFast Discrete Diode in a D2-Pak package
|
International Rectifier
|
| HGT1S7N60A4DS9A |
Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0692-5 53; Contact Mating Area Plating: Gold 晶体管| IGBT的|正陈| 600V的五（巴西）国际消费电子展|4A一（c）|63AB
|
Intersil, Corp.
|
| 15ETH06 15ETH06-1 15ETH06S 15ETH06FP |
Hyperfast Rectifier Hyperfast整流
600V 15A Hyperfast Discrete Diode in a TO-220 FullPack package 600V5A条Hyperfast分立二极管采TO - 220 FullPack
600V 15A HyperFast Discrete Diode in a TO-220AC package
600V 15A HyperFast Discrete Diode in a TO-262 package
600V 15A HyperFast Discrete Diode in a D2-Pak (UltraFast) package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| 2SJ327 2SJ327-Z 2SJ327-Z-T1 2SJ327-Z-E2 2SJ327-Z-T |
Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0620-4 00; No. of Positions: 6; Connector Type: Panel
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
P-channel enhancement type
|
NEC Corp.
NEC[NEC]
|
| MJ15002 MJ15001 MJ15001-D |
Power 15A 140V Discrete PNP
Power 15A 140V Discrete NPN
Complementary Silicon Power Transistors
|
ON Semiconductor
|
| MJ15011 MJ15011-D MJ15012 |
Power 10A 250V Discrete NPN
Complementary Silicon Power Transistors
Power 10A 250V Discrete PNP
|
ON Semiconductor
|
